PART |
Description |
Maker |
KM44C4005C |
4M x 4Bit CMOS Quad CAS DRAM with Extended Data Out
|
Samsung semiconductor
|
K4S510432M K4S510432M-TC1H K4S510432M-TC1L K4S5104 |
32M x 4Bit x 4 Banks Synchronous DRAM Data Sheet 512Mbit SDRAM 32M x 4bit x 4 Banks Synchronous DRAM LVTTL
|
Samsung Electronic Samsung semiconductor
|
HY53C256 HY53C256LS HY53C256S |
256K x 1-Bit CMOS DRAM 256K × 1位CMOS内存
|
Hynix Semiconductor, Inc.
|
AS4C256K16F0-30TC AS4C256K16F0-50TC AS4C256K16F0-5 |
5V 256K X 16 CMOS DRAM (Fast Page Mode) 256K X 16 FAST PAGE DRAM, 50 ns, PDSO40 x16 Fast Page Mode DRAM x16快速页面模式的DRAM
|
Alliance Semiconductor Corp... Electronic Theatre Controls, Inc.
|
AS4C256K16F0-25JC AS4C256K16F0-25JI AS4C256K16F0-2 |
5V 256K x 16 CM0S DRAM (fast page mode), 30ns RAS access time x16FastPageModeDRAM
5V 256K X 16 CMOS DRAM (Fast Page Mode) 5V 256K x 16 CM0S DRAM (fast page mode), 35ns RAS access time 5V 256K x 16 CM0S DRAM (fast page mode), 50ns RAS access time 5V 256K x 16 CM0S DRAM (fast page mode), 25ns RAS access time
|
Alliance Semiconductor Corporation
|
HY514260 |
256K x 16 CMOS DRAM
|
Hynix Semiconductor
|
AS4C256K16FO |
5V 256K x 16 CMOS DRAM
|
Alliance Semiconductor
|
NN514256AT-40 NN514256AT-45 NN514256 NN514256A NN5 |
RESISTOR-METAL FILM 的CMOS 256 × 4位动态随机存储器 CMOS 256K x 4bit Dynamic RAM 的CMOS 256 × 4位动态随机存储器 RES, 11.0 OHM 63MW 75V 1% 100PPM CHIP, 0603
|
http:// Electronic Theatre Controls, Inc. List of Unclassifed Manufacturers
|
KM44S32030 |
8M x 4Bit x 4 Banks Synchronous DRAM(8M x 4浣?x 4缁??姝ュ???AM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|